Imaging Infrared Plasmon Hybridization in Doped Semiconductor Nanocrystal Dimers.

Carrier-doped semiconductor nanocrystals (NCs) offer strong plasmonic responses at frequencies beyond those accessible by conventional plasmonic nanoparticles. Like their noble metal analogues, these emerging materials can harness free space radiation and confine it to the nanoscale but at resonance frequencies that are natively infrared and spectrally tunable by carrier concentration. In this work we combine monochromated STEM-EELS and theoretical modeling to investigate the capability of colloidal indium tin oxide (ITO) NC pairs to form hybridized plasmon modes, providing an additional route to influence the IR plasmon spectrum. These results demonstrate that ITO NCs may have greater coupling strength than expected, emphasizing their potential for near-field enhancement and resonant energy transfer in the IR region.

Tunable Band-Edge Potentials and Charge Storage in Colloidal Tin-Doped Indium Oxide (ITO) Nanocrystals.

Degenerately doped metal-oxide nanocrystals (NCs) show localized surface plasmon resonances (LSPRs) that are tunable via their tunable excess charge-carrier densities. Modulation of excess charge carriers has also been used to control magnetism in colloidal doped metal-oxide NCs. The addition of excess delocalized conduction-band (CB) electrons can be achieved through aliovalent doping or by postsynthetic techniques such as electrochemistry or photodoping. Here, we examine the influence of charge-compensating aliovalent dopants on the potentials of excess CB electrons in free-standing colloidal degenerately doped oxide NCs, both experimentally and through modeling. Taking Sn4+:In2O3 (ITO) NCs as a model system, we use spectroelectrochemical techniques to examine differences between aliovalent doping and photodoping. We demonstrate that whereas photodoping introduces excess CB electrons by raising the Fermi level relative to the CB edge, aliovalent impurity substitution introduces excess CB electrons by stabilizing the CB edge relative to an externally defined Fermi level. Significant differences are thus observed electrochemically between spectroscopically similar delocalized CB electrons compensated by aliovalent dopants and those compensated by surface cations (e.g., protons) during photodoping. Theoretical modeling illustrates the very different potentials that arise from charge compensation via aliovalent substitution and surface charge compensation. Spectroelectrochemical titrations allow the ITO NC band-edge stabilization as a function of Sn4+ doping to be quantified. Extremely large capacitances are observed in both In2O3 and ITO NCs, making these NCs attractive for reversible charge-storage applications.

Electron Beam Infrared Nano-Ellipsometry of Individual Indium Tin Oxide Nanocrystals.

Leveraging recent advances in electron energy monochromation and aberration correction, we record the spatially resolved infrared plasmon spectrum of individual tin-doped indium oxide nanocrystals using electron energy-loss spectroscopy (EELS). Both surface and bulk plasmon responses are measured as a function of tin doping concentration from 1-10 atomic percent. These results are compared to theoretical models, which elucidate the spectral detuning of the same surface plasmon resonance feature when measured from aloof and penetrating probe geometries. We additionally demonstrate a unique approach to retrieving the fundamental dielectric parameters of individual semiconductor nanocrystals via EELS. This method, devoid from ensemble averaging, illustrates the potential for electron-beam ellipsometry measurements on materials that cannot be prepared in bulk form or as thin films.

Degenerately n-Doped Colloidal PbSe Quantum Dots: Band Assignments and Electrostatic Effects.

We present a spectroscopic study of colloidal PbSe quantum dots (QDs) that have been photodoped to introduce excess delocalized conduction-band (CB) electrons. High-quality absorption spectra are obtained for these degenerately doped QDs with excess electron concentrations up to ∼1020 cm-3. At the highest doping levels, electrons have completely filled the 1Se orbitals of the CB and partially populated the higher-energy 1Pe orbitals. Spectroscopic changes observed as a function of carrier concentration permit an unambiguous assignment of the second excitonic absorption maximum to 1Ph-1Pe transitions. At intermediate doping levels, a clear absorption feature appears between the first two excitonic maxima that is attributable to parity-forbidden 1Sh,e-1Pe,h excitations, which become observable because of electrostatic symmetry breaking. Redshifts of the main excitonic absorption features with increased carrier concentration are also analyzed. The Coulomb stabilization energies of both the 1Sh-1Se and 1Ph-1Pe excitons in n-doped PbSe QDs are remarkably similar to those observed for multiexcitons with the same electron count. The origins of these redshifts are discussed.

Human paraoxonase gene polymorphisms and coronary artery disease risk.

BACKGROUND: Complex diseases such as coronary artery disease (CAD), hypertension and diabetes are usually caused by individual susceptibility to multiple genes, environmental factors, and the interaction between them. The paraoxonase 1 (PON1) enzyme has been implicated in the pathogenesis of atherosclerosis and CAD. Two common polymorphisms in the coding region of the PON1 gene, which lead to a glutamine (Q)/arginine (R) substitution at position 192 and a leucine (L)/methionine (M) substitution at position 55, influence PON1 activity. Studies have investigated the association between these polymorphisms and CAD, but with conflicting results. AIMS: 1) To evaluate the association between PON1 polymorphisms and CAD risk; and 2) to study the interaction between PON1 polymorphisms and others in different candidate genes. METHODS: We evaluated the risk of CAD associated with PON1 Q192R and L55M polymorphisms in 298 CAD patients and 298 healthy individuals. We then evaluated the risk associated with the interaction of the PON1 polymorphisms with ACE DD, ACE 8 GG and MTHFR 1298AA. Finally, using a logistic regression model, we evaluated which variables (genetic, biochemical and environmental) were linked significantly and independently with CAD. RESULTS: We found that the PON1 55MM genotype was more common in the CAD population, but this did not reach statistical significance as a risk factor for CAD, while PON1 192RR presented an 80% higher relative risk compared to the population without this polymorphism. The interaction between PON1 192RR and MTHFR 1298AA, sited in different genes, increased the risk for CAD, compared with the polymorphisms in isolation (OR=2.76; 95% CI=1.20-6.47; p=0.009), as did the association of PON1 192RR with ACE DD, which presented a 337% higher risk compared to the population without this polymorphic association (OR=4.37; 95% CI=1.47-13.87; p=0.002). Similarly, the association between PON1 192RR and ACE 8 GG was linked to an even higher risk (OR=6.23; 95% CI=1.67-27.37; p<0.001). After logistic regression, smoking, family history, fibrinogen, diabetes, Lp(a) and the association of PON1 192RR + ACE 8 GG remained in the regression model and proved to be significant and independent risk factors for CAD. In the regression model the latter association had OR=14.113; p=0.018. CONCLUSION: When analyzed separately, the PON1 192RR genotype presented a relative risk for CAD 80% higher than in the population without this genotype. Its association with other genetic polymorphisms sited in different genes, coding for different enzymes and belonging to different physiological systems, always increased the risk for CAD. After correction for other conventional and biochemical risk factors, the PON1 192RR + ACE 8 GG association remained a significant and independent risk factor for CAD.